发明名称 |
Solid-state imaging apparatus, method of manufacturing solid-state imaging apparatus, and electronic apparatus |
摘要 |
A solid-state imaging apparatus includes a transfer gate electrode formed on a semiconductor substrate; a photoelectric conversion unit including an electric charge storage area that is formed from a surface side of the semiconductor substrate in a depth direction, a transfer auxiliary area formed of a second conductive type impurity area that is formed in such a manner as to partially overlap the transfer gate electrode, and a dark current suppression area that is a first dark current suppression area formed in an upper layer of the transfer auxiliary and formed so as to have positional alignment in such a manner that the end portion of the transfer auxiliary area on the transfer gate electrode side is at the same position as the end portion of the transfer auxiliary area; and a signal processing circuit configured to process an output signal output from the solid-state imaging apparatus. |
申请公布号 |
US8710559(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201213527685 |
申请日期 |
2012.06.20 |
申请人 |
KOBAYASHI MIKIKO;HA SANGHOON;SONY CORPORATION |
发明人 |
KOBAYASHI MIKIKO;HA SANGHOON |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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