发明名称 Control method and allocation structure for flash memory device
摘要 A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively.
申请公布号 US8713242(B2) 申请公布日期 2014.04.29
申请号 US20100981499 申请日期 2010.12.30
申请人 WANG CHIH-HUNG;WU CHAO-HAN;HU TING-CHUNG;SOLID STATE SYSTEM CO., LTD. 发明人 WANG CHIH-HUNG;WU CHAO-HAN;HU TING-CHUNG
分类号 G06F12/02 主分类号 G06F12/02
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