发明名称 |
Control method and allocation structure for flash memory device |
摘要 |
A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively. |
申请公布号 |
US8713242(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US20100981499 |
申请日期 |
2010.12.30 |
申请人 |
WANG CHIH-HUNG;WU CHAO-HAN;HU TING-CHUNG;SOLID STATE SYSTEM CO., LTD. |
发明人 |
WANG CHIH-HUNG;WU CHAO-HAN;HU TING-CHUNG |
分类号 |
G06F12/02 |
主分类号 |
G06F12/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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