发明名称 |
Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device |
摘要 |
According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate. |
申请公布号 |
US8710615(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201113222048 |
申请日期 |
2011.08.31 |
申请人 |
SCHMIDT GERHARD;INFINEON TECHNOLOGIES AG |
发明人 |
SCHMIDT GERHARD |
分类号 |
H01L31/08 |
主分类号 |
H01L31/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|