发明名称 Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device
摘要 According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.
申请公布号 US8710615(B2) 申请公布日期 2014.04.29
申请号 US201113222048 申请日期 2011.08.31
申请人 SCHMIDT GERHARD;INFINEON TECHNOLOGIES AG 发明人 SCHMIDT GERHARD
分类号 H01L31/08 主分类号 H01L31/08
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