发明名称 |
Semiconductor device having a bonding pad and shield structure of different thickness |
摘要 |
A semiconductor device includes a device substrate having a front side and a back side corresponding to a front side and a back side of the semiconductor device, a metal feature formed on the front side of the device substrate, a bonding pad disposed on the back side of the semiconductor device and in electrical communication with the metal feature, and a shield structure disposed on the back side of the device substrate in which the shield structure and the bonding pad have different thicknesses relative to each other. |
申请公布号 |
US8710612(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201113112828 |
申请日期 |
2011.05.20 |
申请人 |
TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;WANG WEN-DE;LIN JENG-SHYAN;HO CHENG-YING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TSAI SHUANG-JI;YAUNG DUN-NIAN;LIU JEN-CHENG;WANG WEN-DE;LIN JENG-SHYAN;HO CHENG-YING |
分类号 |
H01L31/02;H01L21/30;H01L27/146 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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