FET device having ultra-low on-resistance and low gate charge

摘要

A metal-oxide-semiconductor field effect transistor (MOSFET) includes a substrate, the substrate being heavily doped and of a first conductivity type, a substrate cap region disposed on the substrate, the substrate cap region being heavily doped and of the first conductivity type and a body region disposed on the substrate cap region, the body region being lightly doped and of a second conductivity type. The MOSFET also includes a trench extending into the body region, a source region of the first conductivity type disposed in the body region and in contact with an upper portion of a sidewall of the trench and an out-diffusion region of the first conductivity type formed such that a spacing between the source region and the out-diffusion region defines a channel region of the MOSFET extending along the sidewall of the trench.