| 摘要 |
A method utilizes HVPE to grow high quality flat and thick compound semiconductors (15) onto foreign substrates (10) using nanostructure compliant layers. Nanostructures (12) of semiconductor materials car be grown on foreign substrates (10) by molecular beam epitaxy (MBE), chemical vapour deposition (CVD), metalorganic chemical vapour deposition (MOCVD) and hydride vapour phase epitaxy (HVPE). Further growth of continuous compound semiconductor thick films (15) or wafer is achieved by epitaxial lateral overgrowth using HVPE. |
