发明名称 |
Method of fabricating semiconductor light emitting device |
摘要 |
There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented. |
申请公布号 |
US8709839(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201213493342 |
申请日期 |
2012.06.11 |
申请人 |
LEE JONG HYUN;LEE DONG JU;KIM YOUNG SUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JONG HYUN;LEE DONG JU;KIM YOUNG SUN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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