发明名称 |
Transistor and display device |
摘要 |
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided. |
申请公布号 |
US8710499(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201313770120 |
申请日期 |
2013.02.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;SASAKI TOSHINARI;SAKATA JUNICHIRO;TSUBUKU MASASHI |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|