PHOTO FILM MASK INCLUDING DLC PATTERN AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a photomask including a DLC pattern and, more specifically, to a manufacturing method for a photomask comprising: a step of forming a photoresist layer on a film; a step of forming a micro-pattern layer in which patterns are formed on the photoresist layer; a step of forming patterns on the photoresist layer by irradiating with UV light; a step of removing the micro-pattern layer; a step of forming a DLC layer on the film and the photoresist layer in which the pattern are formed; and a photoresist removal step of removing the DLC layer on the photoresist by removing the photoresist layer. The photomask including the DLC pattern and the manufacturing method thereof according to the present invention is able to implement micro-patterns and is able to make the critical dimension (CD) of a pattern wall since the thickness of a light shield layer is formed in less than 150 nm.