发明名称 |
Single check memory devices and methods |
摘要 |
Memory devices and methods of operating memory devices are shown. Configurations described include circuits to perform a single check between programming pulses to determine a threshold voltage with respect to desired benchmark voltages. In one example, the benchmark voltages are used to change a programming speed of selected memory cells. |
申请公布号 |
US8711616(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US20100975494 |
申请日期 |
2010.12.22 |
申请人 |
SARIN VISHAL;YIP AARON;TANAKA TOMOHARU;MICRON TECHNOLOGY, INC. |
发明人 |
SARIN VISHAL;YIP AARON;TANAKA TOMOHARU |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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