发明名称 |
Non-volatile memory array and device using erase markers |
摘要 |
A non-volatile memory device, non-volatile memory cell array and related method of operation are disclosed. The non-volatile memory cell array includes a defined data unit stored in a plurality of non-volatile memory cells capable of being electrically overwritten within the non-volatile memory cell array, and an erase marker corresponding to the data unit and indicating whether the data unit is in an erased state or a not-erased state. |
申请公布号 |
US8711610(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201113289277 |
申请日期 |
2011.11.04 |
申请人 |
SEO HUI-KWON;LEE YEONG-TAEK;SHIN YONG-SHIK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO HUI-KWON;LEE YEONG-TAEK;SHIN YONG-SHIK |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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