发明名称 |
Sacrificial spacer approach for differential source/drain implantation spacers in transistors comprising a high-k metal gate electrode structure |
摘要 |
In complex semiconductor devices, the profiling of the deep drain and source regions may be accomplished individually for N-channel transistors and P-channel transistors without requiring any additional process steps by using a sacrificial spacer element as an etch mask and as an implantation mask for incorporating the drain and source dopant species for deep drain and source areas for one type of transistor. On the other hand, the usual main spacer may be used for the incorporation of the deep drain and source regions of the other type of transistor. |
申请公布号 |
US8709902(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201113192567 |
申请日期 |
2011.07.28 |
申请人 |
SCHEIPER THILO;RUTTLOFF KERSTIN;WIATR MACIEJ;FLACHOWSKY STEFAN;GLOBALFOUNDRIES INC. |
发明人 |
SCHEIPER THILO;RUTTLOFF KERSTIN;WIATR MACIEJ;FLACHOWSKY STEFAN |
分类号 |
H01L21/336;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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