发明名称 |
Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation region |
摘要 |
In a region located between a collector electrode and a semiconductor substrate, there are a portion where a hollow region is located and a portion where no hollow region is located. Between the collector electrode and the portion where no hollow region is located in the semiconductor substrate, a floating silicon layer electrically isolated by insulating films is formed. |
申请公布号 |
US8710617(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US201313802538 |
申请日期 |
2013.03.13 |
申请人 |
YAMASHITA JUNICHI;TERASHIMA TOMOHIDE;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YAMASHITA JUNICHI;TERASHIMA TOMOHIDE |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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