| 摘要 |
A semiconductor device includes a first conductive structure and a second conductive structure. The first conductive structure is formed in a first region of a substrate, and includes a first polysilicon layer pattern, a first conductive layer pattern having a resistance smaller than that of the first polysilicon layer pattern, and a first hard mask. The second conductive structure is formed in a second region of the substrate and has a thickness substantially the same as that of the first conductive structure. The second conductive structure includes a second polysilicon layer pattern, a second conductive layer pattern having a resistance smaller than that of the second polysilicon layer pattern and having a thickness different from that of the first conductive layer pattern, and a second hard mask. |
