发明名称 Semiconductor chip, stack module, and memory card
摘要 Provided are a semiconductor chip including a TSV passing through a transistor, and a stack module and a memory card using such a semiconductor chip. The semiconductor chip may include a semiconductor layer that has a first surface and a second surface opposite to each other. A conductive layer may be disposed on the first surface of the semiconductor layer. A TSV may pass through the semiconductor layer and the conductive layer. A side wall insulating layer may surround a side wall of the TSV in order to electrically insulate the semiconductor layer and the conductive layer from the TSV.
申请公布号 US8710591(B2) 申请公布日期 2014.04.29
申请号 US20100868091 申请日期 2010.08.25
申请人 HWANG HYONG-RYOL;LEE HO-CHEOL;NA BYONG-WOOK;SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG HYONG-RYOL;LEE HO-CHEOL;NA BYONG-WOOK
分类号 H01L27/088;H01L23/48 主分类号 H01L27/088
代理机构 代理人
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