发明名称 |
Semiconductor chip, stack module, and memory card |
摘要 |
Provided are a semiconductor chip including a TSV passing through a transistor, and a stack module and a memory card using such a semiconductor chip. The semiconductor chip may include a semiconductor layer that has a first surface and a second surface opposite to each other. A conductive layer may be disposed on the first surface of the semiconductor layer. A TSV may pass through the semiconductor layer and the conductive layer. A side wall insulating layer may surround a side wall of the TSV in order to electrically insulate the semiconductor layer and the conductive layer from the TSV. |
申请公布号 |
US8710591(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US20100868091 |
申请日期 |
2010.08.25 |
申请人 |
HWANG HYONG-RYOL;LEE HO-CHEOL;NA BYONG-WOOK;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG HYONG-RYOL;LEE HO-CHEOL;NA BYONG-WOOK |
分类号 |
H01L27/088;H01L23/48 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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