发明名称 |
Semiconductor device having a plurality of elements on one semiconductor substrate and method of manufacturing the same |
摘要 |
A semiconductor device includes a semiconductor substrate that includes a plurality of section having different thicknesses. The sections include a first section having a first thickness and a second section having a second thickness, the second section is the thinnest section among all the sections, and the first thickness is greater than the second thickness. A plurality of isolation trenches penetrates the semiconductor substrate for defining a plurality of element-forming regions in the first section and the second section. A plurality of elements is located at respective ones of the plurality of element-forming regions. The elements include a double-sided electrode element that includes a pair of electrodes separately disposed on the first surface and the second surface, and the double-sided electrode element is located in the second section. |
申请公布号 |
US8710568(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US20080289222 |
申请日期 |
2008.10.23 |
申请人 |
OZEKI YOSHIHIKO;FUJII TETSUO;KOUNO KENJI;DENSO CORPORATION |
发明人 |
OZEKI YOSHIHIKO;FUJII TETSUO;KOUNO KENJI |
分类号 |
H01L27/108;H01L29/94 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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