Method for manufacturing non-volatile memory device, non-volatile memory element, and non-volatile memory device

摘要

A manufacturing method for manufacturing, with a simple process, a non-volatile memory apparatus having a stable memory performance includes: (a) forming a stacking-structure body above a substrate by alternately stacking conductive layers comprising a transition metal and interlayer insulating films comprising an insulating material; (b) forming a contact hole penetrating through the stacking-structure body to expose part of each of the conductive layers; (c) forming variable resistance layers by oxidizing the part of each of the conductive layers, the part being exposed in the contact hole, and each of the variable resistance layers having a resistance value that reversibly changes according to an application of an electric signal; and (d) forming a pillar electrode in the contact hole by embedding a conductive material in the contact hole, the pillar electrode being connected to each of the variable resistance layers.