发明名称 PLASMA PROCESSING APPARATUS
摘要 By providing a filter unit on a heater power feed line that electrically connects a heating element in a mounting table disposed in a processing vessel and a heater power supply disposed outside the processing vessel, influence on an electron density distribution on the mounting table or in-plane uniformity of process characteristics can be minimized. In a plasma processing apparatus, a heating element (50) provided in a susceptor (12) is electrically connected to a heater power supply (58(IN)) disposed outside a chamber (10) via an internal conductor (51) provided through the susceptor (12), a power feed conductor (52) provided across a space (SP), a filter unit (54) and an electric cable (56). A casing (110) of the filter unit (54) is vertically fastened, from a bottom of the chamber (10), to an opening (114) formed in a bottom wall (base) (10a) of the chamber (10) to be adjacent to a cylindrical conductive cover (42) that surrounds a power feed rod (40). The casing (110) is physically or electrically coupled to the bottom wall (10a) of the chamber (10).
申请公布号 KR20140050560(A) 申请公布日期 2014.04.29
申请号 KR20130124177 申请日期 2013.10.17
申请人 TOKYO ELECTRON LIMITED 发明人 OKUNISHI NAOHIKO
分类号 H05H1/46;H01L21/205;H01L21/3065 主分类号 H05H1/46
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