| 发明名称 |
Optoelectronic component and method for producing an optoelectronic component |
| 摘要 |
An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0<x<0.95. In a method for producing an optoelectronic component an epitaxial growth substrate of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0≰y≰1, is provided and an epitaxial layer sequence, which is based on a nitride compound semiconductor and contains an active layer, is grown thereon. |
| 申请公布号 |
US8711893(B2) |
申请公布日期 |
2014.04.29 |
| 申请号 |
US20090920312 |
申请日期 |
2009.01.28 |
| 申请人 |
AVRAMESCU ADRIAN STEFAN;EICHLER CHRISTOPH;STRAUSS UWE;HAERLE VOLKER;OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
AVRAMESCU ADRIAN STEFAN;EICHLER CHRISTOPH;STRAUSS UWE;HAERLE VOLKER |
| 分类号 |
H01S5/00;H01L33/00;H01L33/10 |
主分类号 |
H01S5/00 |
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