SEMICONDUCTOR LIGHT EMITTING DIODE WITH IMPROVED CURRENT SPREADING PERFORMANCE AND HIGH BRIGHTNESS COMPRISING TRENCH ISOLATING LIGHT EMITTING REGION

摘要

The present invention relates to a semiconductor light emitting element comprising a light emitting region separation trench and a contact hole structure. The semiconductor light emitting element according to the present invention can widen an effective light emitting area by evenly dispersing a flowing current through a semiconductor layer. In addition, each light emitting region is separated by the light emitting region separation trench, thereby having an effect similar to an effect caused by the parallel connection of elements, and improving optical efficiency.