| 摘要 |
The present invention relates to a semi-polar or non-polar nitride-based light emitting device. The semi-polar or non-polar nitride-based light emitting device comprises: a substrate which is either a nitride semiconductor having a semi-polar surface or a non-polar surface as a crystal surface, or a sapphire substrate having an R-surface or an M-surface as a crystal surface; a first nitride semiconductor layer which is grown on the substrate; a second nitride semiconductor layer which is grown on the first nitride semiconductor layer; a transparent electrode layer which is formed on the second nitride semiconductor layer and is composed of semi-polar or non-polar zinc oxide. The transparent electrode layer is composed of crystalline semi-polar or non-polar zinc oxide which is formed by atomic layer deposition performed at or below 400°C or crystalline semi-polar or non-polar zinc oxide which is formed by sputtering deposition, chemical vapor deposition, or a chemical wet method. |
