| 摘要 |
An objective of the present invention is to manufacture a semiconductor device through a smaller number of processes. The semiconductor device includes a transistor and a pixel electrode. The transistor includes a first gate electrode, a first insulation layer on the first gate electrode, a semiconductor layer on the first insulation layer, a second insulation layer on the semiconductor layer, and a second gate electrode on the second insulation layer. The first gate electrode includes a region overlapping with the semiconductor layer through the first insulation layer. The second gate electrode includes a region overlapping with the semiconductor layer through the second insulation layer. The pixel electrode is installed on the second insulation layer. A first region is at least a part of a region in which at least a part of the second gate electrode overlaps with at least a part of the semiconductor layer. A second region is at least a part of a region in which the pixel electrode is installed. The second insulation layer in the first region is thinner than the second insulation layer in the second region. |
