| 摘要 |
<p>The present invention relates to a power semiconductor module including a substrate. The power semiconductor module comprises first and second DC voltage load current connection elements and first and second power semiconductor components. The first and second power semiconductor components are arranged along a lateral first direction of the substrate. The power semiconductor module comprises a foil composite including a first metallic foil layer, a structured second metallic foil layer, and an electrical insulating foil layer arranged between the first and second metallic foil layers. The first and second power semiconductor components are electrically connected to the foil composite and the substrate. The first and second power semiconductor components are arranged on the same side where the first and second DC voltage load current connection elements are arranged. The present invention provides a power semiconductor module configured to have a considerably low inductance.</p> |
