发明名称 CELLULE MEMOIRE ELECTRONIQUE A DOUBLE GRILLE ET PROCEDE DE FABRICATION D'UNE TELLE CELLULE
摘要 <p>The cell (100) has a lower face (114) in contact with a stack zone such that the zone separates a part (103-2) of a channel (103) and the lower face. An upper face (115) is plane and parallel to a substrate plane. Lateral faces (113, 116) connect the lower face to the upper face. One of the lateral faces is inclined at an angle strictly between 0 and 90 degrees relative to the plane of the substrate such that length (L) of the upper face is strictly greater than length (L-MG) of the lower face. The lengths are measured as distance between the lateral faces over length of the channel. An independent claim is also included for a method for manufacturing a memory cell.</p>
申请公布号 FR2988896(B1) 申请公布日期 2014.04.25
申请号 FR20120052842 申请日期 2012.03.29
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 CHARPIN NICOLLE CHRISTELLE
分类号 G11C16/04;G11C11/56 主分类号 G11C16/04
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