发明名称 A method for manufacturing a semiconductor device
摘要 When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.
申请公布号 KR101389298(B1) 申请公布日期 2014.04.25
申请号 KR20120072774 申请日期 2012.07.04
申请人 发明人
分类号 H01L29/786;H01L51/56 主分类号 H01L29/786
代理机构 代理人
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