SUBSTRATE PROCESSING APPARATUS

摘要

The present invention relates to a substrate processing device comprising a chamber which comprises a space inside; a top lead which is positioned on the upper part of the chamber and comprises one or more gas inlets; a substrate support unit which is installed inside the chamber and supports a plurality of substrates; and a gas injection device. The gas injection device comprises a central injection unit which is positioned on the upper part of the substrate support unit; a source gas injection unit which is positioned in a circumferential direction of the central injection unit and injects source gas to the substrate support unit; a response gas injection unit which is positioned in the circumferential direction of the central injection unit and injects response gas to the substrate support unit; and a purge gas injection unit which is arranged between the source gas injection unit and the response gas injection unit. At least one of the source gas injection unit and the response gas injection unit comprises a main injection unit which injects gas to the substrate support unit and a protrusion unit which protrudes between the central injection unit and the main injection unit in a direction which crosses the main injection unit and injects the gas. The main injection unit and the protrusion unit are divided into areas according to the circumferential direction. The main injection unit or the protrusion unit injects the gas to the remaining area. The present invention is provided to improve the uniformity and the reliability of a thin film.