SEMICONDUCTOR DEVICE

摘要

According to an embodiment of the present invention, a semiconductor device can include a source electrode which is formed on one side of an N-type AlGaN layer; an N-type and P-type AlGaN layer which is formed on the other side of a P-type AlGaN layer and is formed in a direction orthogonal to the source electrode; a gate electrode which is formed on one side of the N-type and P-type AlGaN layer; and a drain electrode which is formed on the other side of the N-type and P-type AlGaN layer.