| 摘要 |
According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and accumulates the charges. The fixed charge layer is formed on a light receiving surface side of the photoelectric conversion element, and holds negative fixed charges. The silicon nitride film is formed on a light receiving surface side of the fixed charge layer. The silicon oxide film is formed between the fixed charge layer and the silicon nitride film. |
