| 摘要 |
Methods and apparatuses for combinatorial processing are disclosed. Methods of the present disclosure providing a substrate, the substrate comprising a plurality of site-isolated regions. Methods include forming a first capping layer on the surface of a first site-isolated region of the substrate. The methods further include forming a second capping layer on the surface of a second site-isolated region of the substrate. In some embodiments, forming the first and second capping layers include exposing the first and second site-isolated regions to a plasma induced with H2 and hydrocarbon gases. In some embodiments, methods include applying at least one subsequent process to each site-isolated region. In addition, methods include evaluating results of the films post processing. |
