SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a substrate (1), a source region (1S) and a drain region (1D) in the substrate (1), a gate stack structure (6/7) between the source region (1S) and the drain region (1D) on the substrate (1), and offset spacers (2/4) surrounding the gate stack structure (6/7), and is characterized in that the source region (1S) and the gate stack structure (6/7) are symmetrically disposed about the drain region (1D). A method for manufacturing the semiconductor device, by using a double spacer structure of the offset spacers (2/4) and the gate sidewall spacer (3) to form a fine dummy gate line and using a source (1S) - drain (1D) - source (1S) symmetrical structure to improve processing accuracy of the device, increases reliability of the device in whole and improves performance.