The present invention relates to a memory device. The memory device according to an embodiment of the present invention comprises a plurality of memory regions, wherein each of the memory regions is controlled by different controllers and each of the memory regions may have at least one of the structure and operation different from each other.
申请公布号
KR20140048462(A)
申请公布日期
2014.04.24
申请号
KR20120114254
申请日期
2012.10.15
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY