SILICON SINGLE CRYSTAL GROWING APPARATUS AND SILICON SINGLE CRYSTAL GROWING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a silicon single crystal growing apparatus and a silicon single crystal growing method which can maintain heat insulation performance of the liquid surface of raw material melting liquid and suppress first dislocation generation due to solidification and the like.SOLUTION: A silicon single crystal growing apparatus by a Czochralski method of arranging a graphite crucible inside a graphite heater for heating and a quartz crucible inside the graphite crucible, and growing crystal from raw material melting liquid filled in the quartz crucible, includes: a heater outer insulation component outside the graphite heater; a crucible lower insulation component below the graphite crucible; a crucible upper insulation component above the straight barrel sections of the graphite crucible and the quartz crucible; a crucible outer insulation component positioned outside the straight barrel section of the graphite crucible; a crucible inner insulation component inside the straight barrel sections of the graphite crucible and the quartz crucible; and a heat insulation component above the liquid surface of the raw material melting liquid. In a space formed inside the crucible upper insulation component, the crucible outer insulation component and the crucible inner insulation component, the graphite crucible and the quartz crucible can be raised and lowered.