发明名称 Mask for Use in Lithography
摘要 A mask, or photomask, is used in lithography systems and processes. The mask includes a first polygon of a first state and a second polygon of a second state. The mask also includes a field of the first state and a third polygon of the second state, and in the field. The first and second states are different, and the first and second polygons are located outside of the field.
申请公布号 US2014113222(A1) 申请公布日期 2014.04.24
申请号 US201414152680 申请日期 2014.01.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LU YEN-CHENG;YU SHINN-SHENG;YEN ANTHONY
分类号 G03F1/24 主分类号 G03F1/24
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