| 摘要 |
The present invention relates to a semiconductor structure and a method for forming the same, a SRAM memory unit and a SRAM memory. The semiconductor structure comprises at least two adjacent transistors and conductive layers wherein at least two adjacent transistors are formed on the semiconductor substrate; the gate electrode of the two adjacent transistors and a doping region positioned between the gate electrodes of the two adjacent transistors are surrounded for forming an opening part; and the conductive layer covers the bottom part and sidewall of the opening part. The other structure of the semiconductor comprises a first transistor, a second transistor and the conductive layer wherein the first and second transistors are formed on the semiconductor substrate; an insulation layer of the gate electrode of the first transistor covers only a part of the gate electrode layer distant from the doping region of the second transistor; the insulation layer, the gate electrode layer of the first transistor exposed by the insulation layer, the doping region of the second transistor and the gate electrode of the second transistor are surrounded for forming an opening part; and the conductive layer covers the bottom part and the sidewall of the opening part. The present invention further provides a method for forming the semiconductor structure, the SRAM memory unit comprising the semiconductor structure, and the SRAM memory. The present invention can reduce the area of the semiconductor structure. |
