发明名称 LOW NOISE AMPLIFIER
摘要 The present invention relates to a low noise amplifier. Provided is the low noise amplifier which includes a main NMOS transistor which receives a signal through a gate terminal and amplifies the signal, a main PMOS transistor whose source terminal is connected to a drain terminal of the main NMOS transistor, an LC tank which receives a supply voltage through one end thereof, is connected to the drain terminal of the main NMOS transistor through the other thereof, and has a resonant frequency corresponding to the frequency of the signal, an auxiliary NMOS transistor which is connected between the drain terminal and the source terminal of the main NMOS transistor in parallel, and an auxiliary PMOS transistor which is connected between the source terminal and the drain terminal of the main PMOS transistor in parallel. [Reference numerals] (121) First voltage applying unit; (122) Second voltage applying unit; (123) Third voltage applying unit; (124) Fourth voltage applying unit
申请公布号 KR101387975(B1) 申请公布日期 2014.04.24
申请号 KR20120150613 申请日期 2012.12.21
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 KIM, JUN SEO;KIM, YEO MYUNG;HAN, HONG GUL;KIM, TAE WOOK
分类号 H03F1/26;H03F1/32 主分类号 H03F1/26
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