摘要 |
The present invention relates to a low noise amplifier. Provided is the low noise amplifier which includes a main NMOS transistor which receives a signal through a gate terminal and amplifies the signal, a main PMOS transistor whose source terminal is connected to a drain terminal of the main NMOS transistor, an LC tank which receives a supply voltage through one end thereof, is connected to the drain terminal of the main NMOS transistor through the other thereof, and has a resonant frequency corresponding to the frequency of the signal, an auxiliary NMOS transistor which is connected between the drain terminal and the source terminal of the main NMOS transistor in parallel, and an auxiliary PMOS transistor which is connected between the source terminal and the drain terminal of the main PMOS transistor in parallel. [Reference numerals] (121) First voltage applying unit; (122) Second voltage applying unit; (123) Third voltage applying unit; (124) Fourth voltage applying unit |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
KIM, JUN SEO;KIM, YEO MYUNG;HAN, HONG GUL;KIM, TAE WOOK |