METHOD OF MANUFACTURING LOW-DEFECT-DENSITY SILICON USING HIGH GROWTH SPEED

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a single-crystal silicon ingot having an axially symmetric region including substantially no aggregation intrinsic-point defect.SOLUTION: A method includes: (i) forming a region in a constant-diameter part where a hole is a predominant intrinsic-point defect; (ii) heating a side face of an ingot to generate heat-inductive silicon self interstitial atom flux reducing the density of the hole in the region and directed from the heated face to the region; and (iii) further maintaining a temperature of a region which exceeds a temperature Tat which aggregation of a hole point defect to an aggregation defect occurs in a time between the formation of the region and the reduction in hole density in the region.