| 摘要 |
A nonvolatile semiconductor memory device includes word lines, bit lines, a cross-point cell array including cells, each of which includes memory cells and at least one offset detection cell, a word line selection circuit, a bit line selection circuit, a write control circuit, a current sensing circuit which detects a current and converts it into an electrical signal, wherein a write control circuit adjusts a write electrical signal for causing a second write current higher than a first write current to flow through the memory cell. |
