GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR EVALUATING END SURFACE FOR OPTICAL RESONATOR OF GROUP-III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND METHOD FOR EVALUATING SCRIBE GROOVE

摘要

A group-III nitride semiconductor laser having a laser resonator that enables a reduction in disturbance due to return light on a semipolar surface of a substrate in which the c-axis of a group-III nitride is inclined in the direction of an m-axis, wherein when the angle (ALPHA) is in the range of 71-79 degrees inclusive, the angle (α1) is in the range of 10-25 degrees inclusive, and the angle (&bgr;1) is in the range of 0-5 degrees inclusive. At a first end surface in the vicinity of a first surface closer to an epi-surface, the angle formed by a first normal vector (ENV1) and a c+ axis vector (VC+) within an m-n plane has a value close to the angle (α1) (for example, in the range of 10-25 degrees inclusive). At the first end surface in the vicinity of the back surface of the substrate, the angle formed by a second normal vector (ENV2) and the c+ axis vector (VC+) within the m-n plane has a value close to the angle (&bgr;1) (for example, in the range of 0-5 degrees inclusive).