PHOTOELECTRIC CONVERSION DEVICE, BUILT STRUCTURE, AND ELECTRONIC INSTRUMENT

摘要

Provided is a photoelectric conversion device which allows regions that are insensitive to incident light to be eliminated, allows degradation of the organic semiconductor due to the Staebler-Wronski effect or UV components to be suppressed, makes it possible to obtain an extremely high photoelectric conversion efficiency, allows the area to be increased with exceptional ease, and can be suitably used as a solar cell or the like. The photoelectric conversion device has: a structural body (80) for converting 3D-space-propagating light into 2D-space-propagating light; a planar optical waveguide (20) for guiding the 2D-space-propagating light; and semiconductor layers (30) for photoelectric conversion, provided to the edge parts of the planar optical waveguide (20). Light incident on a principal surface of the planar optical waveguide (20) is guided through the interior thereof and caused to be incident on a semiconductor layer (30). The angle (θ) between the net direction of progression of light guided through the planar optical waveguide (20) and the net direction of movement of carriers generated in a semiconductor layer (30) by the light incident on the semiconductor layer (30) from the edge surface of the planar optical waveguide (20) is substantially a right angle.