GROUP III NITRIDE SEMICONDUCTOR COMPOSITE SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light-emitting device having high light-extraction efficiency and provide a group III nitride semiconductor composite substrate suitably used for the group III nitride semiconductor light-emitting device.SOLUTION: A group III nitride semiconductor composite substrate 1 comprises: a base substrate 11 which is formed of a sintered body containing two and more kinds of oxide particles having different refraction indices from each other and in which a mean particle diameter of at least one kind of oxide particles is not less than 0.1 μm and not more than 30 μm; a bonding film 12 arranged on the base substrate 11; and a group III nitride semiconductor film 13 arranged on the bonding film 12. A group III nitride semiconductor light-emitting device 3 comprises: the group III nitride semiconductor composite substrate 1; and at least one layer of a group III nitride semiconductor layer 20 arranged on the group III nitride semiconductor film 13 of the group III nitride semiconductor composite substrate 1, in which the group III nitride semiconductor layer 20 includes a luminescent layer 23.