| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage and a drive method of the nonvolatile storage capable of achieving a stable multi-value storing operation.SOLUTION: A nonvolatile storage 100 comprises a nonvolatile memory element 101 including: a first electrode; a second electrode; and a resistance change layer disposed between the first electrode and the second electrode, a resistance state of which changes from HIGH to LOW when a voltage pulse of a first polarity is applied across the first electrode and the second electrode, and the resistance state of which changes from LOW to HIGH when a voltage pulse of a second polarity different from the first polarity is applied. The nonvolatile storage 100 further comprises a variable load resistor 102 connected electrically in series with the resistance change layer, and is configured so that the HIGH resistance state of the resistance change layer can be set to plural resistance values by changing the value of the variable load resistor 102 when a voltage pulse of the second polarity is applied to the resistance change layer and the variable load resistor 102. The smaller value of the variable load resistor 102, the higher resistance value in the HIGH resistance state of the resistance change layer. |
