| 摘要 |
An enhanced switched device. By introducing a non-planar step-shaped structure in a gate region and generating a gallium nitride non-polar surface, semi-polar surface, or combination thereof, two-dimensional electronic gas is interrupted in the gate region. When the gate voltage increases, an electrically conductive trench if formed in the trench layer, thereby enabling the operation of the enhanced device. The manufacturing technique for the device is simple and is compatible with the manufacturing techniques of conventional depletion type devices. |
