发明名称 |
REFRESH METHOD, REFRESH ADDRESS GENERATOR, VOLATILE MEMORY DEVICE INCLUDING THE SAME |
摘要 |
A refresh method for a volatile memory device includes refreshing memory cells of a first set of rows of an array at a first refresh rate having a first refresh period, the first refresh rate being a lower rate having a longer refresh period than a second refresh rate having a second refresh period, wherein each memory cell in the first set of rows of the array has a retention time longer than the first refresh period; and refreshing memory cells of a second set of rows of the array at a third refresh rate having a third refresh period, the third refresh rate being a higher rate having a shorter refresh period than the second refresh rate having the second refresh period, wherein at least one memory cell of each row of the second set of rows has a retention time longer than the third refresh period and shorter than the first refresh period. The second refresh period corresponds to a refresh period defined in a standard for the volatile memory device. |
申请公布号 |
US2014112086(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201314057556 |
申请日期 |
2013.10.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK CHUL-WOO;CHOI JOO-SUN;HWANG HONG-SUN |
分类号 |
G11C11/406 |
主分类号 |
G11C11/406 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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