发明名称 REFRESH METHOD, REFRESH ADDRESS GENERATOR, VOLATILE MEMORY DEVICE INCLUDING THE SAME
摘要 A refresh method for a volatile memory device includes refreshing memory cells of a first set of rows of an array at a first refresh rate having a first refresh period, the first refresh rate being a lower rate having a longer refresh period than a second refresh rate having a second refresh period, wherein each memory cell in the first set of rows of the array has a retention time longer than the first refresh period; and refreshing memory cells of a second set of rows of the array at a third refresh rate having a third refresh period, the third refresh rate being a higher rate having a shorter refresh period than the second refresh rate having the second refresh period, wherein at least one memory cell of each row of the second set of rows has a retention time longer than the third refresh period and shorter than the first refresh period. The second refresh period corresponds to a refresh period defined in a standard for the volatile memory device.
申请公布号 US2014112086(A1) 申请公布日期 2014.04.24
申请号 US201314057556 申请日期 2013.10.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK CHUL-WOO;CHOI JOO-SUN;HWANG HONG-SUN
分类号 G11C11/406 主分类号 G11C11/406
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