| 摘要 |
A semiconductor device disclosed in the present description is provided with a semiconductor substrate, and a plurality of trench gates, which extend in the first direction, and which are disposed in the second direction at intervals, said second direction being orthogonal to the first direction. Each of the trench gates has: a first portion opened in the front surface of the semiconductor substrate; a second portion that is extending in the direction tilted to the positive direction of the second direction with respect to the depth direction of the semiconductor substrate, said second portion extending from the first portion; and a third portion that is extending in the direction tilted to the negative direction of the second direction with respect to the depth direction of the semiconductor substrate, said third portion extending from the first portion. |
