SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device manufacturing method, comprising: forming a single-crystal etching stop layer (2) and a single-crystal dummy gate layer (3) on a substrate (1); forming a dummy gate pattern (3P) by wet etching the dummy gate layer (3); forming gate sidewall (4) around the dummy gate pattern (3P); wet etching to remove the dummy gate pattern (3P), remain a gate trench (3T); forming a gate stack in the gate trench (3T). Using a epitaxial single-crystal thin film as a dummy gate and the etching stop layer during wet etching the dummy gate, can promote the verticality of the gate section, also can prevent the erosion in the corner of the bottom of the substrate, and effectively improving the performance and the reliability of the device.