发明名称 |
METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS |
摘要 |
Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures. |
申请公布号 |
WO2014061906(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
WO2013KR06960 |
申请日期 |
2013.08.01 |
申请人 |
SEOUL VIOSYS CO., LTD. |
发明人 |
HEO, JEONG HUN;CHOI, JOO WON;LEE, CHOONG MIN;KIM, YOUNG WUG;SHIN, SU JIN;HONG, SU YOUN |
分类号 |
H01L33/12;H01L21/306 |
主分类号 |
H01L33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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