发明名称 PHOTOMASK, PHOTOMASK SET, EXPOSURE APPARATUS AND EXPOSURE METHOD
摘要 PROBLEM TO BE SOLVED: To provide a photomask capable of improving alignment accuracy with respective photomasks disposed on the front and rear faces of a substrate.SOLUTION: A photomask 70 includes: a drawing pattern 73 for exposure formed on one face opposing a substrate P; a first alignment mark TM1 for alignment with a substrate-side mark P5 formed on the substrate P, the first alignment mark being provided in a region of the one face where the drawing pattern 73 is not formed, the region opposing the substrate P when the substrate is retained; and a second alignment mark TM for alignment with a third alignment mark TM3 provided on another photomask 70, the second alignment mark being provided in a region which does not oppose the substrate P when the substrate P is retained.
申请公布号 JP2014074888(A) 申请公布日期 2014.04.24
申请号 JP20130140039 申请日期 2013.07.03
申请人 NIPPON MEKTRON LTD 发明人 TAKANO SHOJI;MATSUDA FUMIHIKO;NARUSAWA YOSHIHIKO
分类号 G03F1/42;G03F7/20;G03F9/00;H01L21/027 主分类号 G03F1/42
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