DEPOSITION METHOD AND DEPOSITION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a deposition method which allows for production of an AlON film in which nitrogen is dispersed uniformly in the thickness direction even if the thickness is large.SOLUTION: After depositing an AIN film 23 on the SiC substrate 17 of a wafer W, deposition of an AIO film 24 and deposition of an AIN film 23 on the AIO film 24 thus deposited are repeated, to form an AION film 25 having a lamination structure where the AIO film 24 and the AIN film 23 are laminated alternately, and then the AION film 25 is heat treated.