| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element in which adhesion of an electrode layer containing copper as a main component and an oxide semiconductor layer containing zinc is enhanced, while preventing generation of reduction in the oxide semiconductor layer.SOLUTION: In a method of manufacturing a semiconductor element by forming an adhesion layer 16 tightly adhered on the surface of an oxide semiconductor layer 14 containing zinc, and forming an electrode layer 17 containing copper as a main component tightly adhered on the surface of the adhesion layer 16, the adhesion layer 16 composed of a copper oxide is formed tightly adhered on the surface of the oxide semiconductor layer 14, by exposing the oxide semiconductor layer 14 to the surface of a processing object 10, and then sputtering a copper oxide target containing 3 atom% or more of oxygen in a rare gas atmosphere having a pressure lower than the atmospheric pressure. Since the adhesion layer 16 is formed by sputtering a copper oxide target containing 3 atom% or more of oxygen, the adhesion layer 16 does not reduce the oxide semiconductor layer 14, and adhesion is enhanced between the electrode layer 17 and the oxide semiconductor layer 14. |
