| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory element capable of initial breakdown by applying a lower voltage.SOLUTION: The nonvolatile memory element comprises: a first electrode 105; a second electrode 107; and a resistance change layer 106 which is formed being interposed between the first electrode 105 and the second electrode 107 and constituted of at least two layers of a first resistance change layer 1061 and a second resistance change layer 1062, in which the resistance value reversibly changes based on an electric signal. The first resistance change layer 1061 is formed of a metal oxide 106a. The second resistance change layer 1062 comprises: a first portion formed in a uniform plane; and a second portion formed of insulator 106c and formed in a uniform plane. The oxygen-deficient rate of the first portion is smaller than that of a metal oxide 106a, and entire of the first portion being disposed in a uniform plane region of a metal oxide 106b. Each of the first portion and the second portion of the second resistance change layer 1062 are in contact with a portion of a main plane of the first resistance change layer 1061 and the second resistance change layer 1062. |
